• DocumentCode
    3379210
  • Title

    Separate-confinement vertical quantum well-lasers grown by self-ordering on V-grooved substrates

  • Author

    Ils, P. ; Gustafsson, A. ; Chiriotti, N. ; Kapon, E.

  • Author_Institution
    Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    We fabricated and studied separate confinement (SC) vertical quantum well (VQW) AlGaAs lasers formed by self-ordering on V-grooved substrates. Quantum confinement in the vertical quantum well is evidenced by the TM polarized output.
  • Keywords
    III-V semiconductors; aluminium compounds; cathodoluminescence; electroluminescence; gallium arsenide; light polarisation; quantum well lasers; semiconductor growth; AlGaAs; AlGaAs lasers; TM polarized output; V-grooved substrates; VQW; quantum confinement; self-ordering; separate-confinement vertical quantum well-lasers; Epitaxial growth; Laser theory; Optical waveguides; Polarization; Potential well; Protons; Quantum well lasers; Substrates; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553741
  • Filename
    553741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3379210