Investigation of ultra thin polycrystalline silicon channel for vertical NAND flash

Author

Kim, Bio ; Lim, Seung-Hyun ; Kim, Dong Woo ; Nakanishi, Toshiro ; Yang, Sangryol ; Ahn, Jae-Young ; Choi, HanMei ; Hwang, Kihyun ; Ko, Yongsun ; Kang, Chang-Jin

Author_Institution

Memory R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea

fYear

2011

fDate

10-14 April 2011

Abstract

We have investigated thin film transistors (TFTs) with ultra-thin polycrystalline silicon (poly-Si) of 77 Å - 185 Å. The TFT charge transfer characteristics such as ON current and effective mobility are dominated not by the thickness itself but by the grain size of poly-Si channel. When the poly-Si channel thickness is decreased with the same grain size, the sub-threshold TFT characteristics are improved without degradation of ON current and reliability properties. These results give us appropriate criteria to establish an excellent poly-Si channel in vertical NAND flash memory.

Keywords

NAND circuits; elemental semiconductors; flash memories; silicon; thin film transistors; ON current; Si; TFT charge transfer characteristics; reliability property; size 77 angstrom to 185 angstrom; thin film transistors; ultrathin polycrystalline silicon channel; vertical NAND flash memory; Charge pumps; Flash memory; Grain boundaries; Grain size; Logic gates; Silicon; Thin film transistors; grain boundary; thin film transistor; ultra-thin polycrystalline silicon; vertical NAND flash;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784464

Filename

5784464