Title :
Depletion region formation at low temperatures
Author :
Viswanathan, C.R. ; Divakaruni, R. ; Prabhakar, V.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The response of the semiconductor device at low temperatures is limited by the time taken for the formation of the depletion region. Hence the capacitance-voltage characteristics of the semiconductor device containing a junction displays dispersion. This paper reports a study of the dispersion caused in the accumulation and depletion regions of the C-V curve in n-channel MOS devices and in the depletion region of a one-sided n+p junction. The authors identify the dispersion in the 30-45 K temperature range as being due to substrate time constant effects and not due to dopant atom emission time constant effects. From the measured admittance as a function of temperature and frequency, the acceptor energy level is determined to within ±0.4 meV
Keywords :
characteristics measurement; electric admittance measurement; insulated gate field effect transistors; 30 to 45 K; C-V curve; acceptor energy level; admittance; capacitance-voltage characteristics; depletion region; n-channel MOS devices; one-sided n+p junction; semiconductor device; substrate time constant effects; Admittance measurement; Atomic measurements; Capacitance-voltage characteristics; Dispersion; Displays; Energy measurement; MOS devices; Semiconductor devices; Substrates; Temperature distribution;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246666
