• DocumentCode
    3379552
  • Title

    Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs

  • Author

    Chen, Chia-Yu ; Ran, Qiushi ; Cho, Hyun-Jin ; Kerber, Andreas ; Liu, Yang ; Lin, Ming-Ren ; Dutton, Robert W.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    Random telegraph noise (RTN) in high-κ nMOSFETs is directly linked to Positive Bias Temperature Instability (PBTI). For the first time, the correlation between Id- and Ig-RTN is clearly observed in high-κ MOSFET. Ig-RTN is directly related to physical trapping or de-trapping and the Id-RTN reflects sensitivity to charge trapping as determined by gm, which is confirmed by both experiments and TCAD simulations.
  • Keywords
    MOSFET; random noise; PBTI; RTN; TCAD; charge trapping; metal gate n-type MOSFET; physical trapping; positive bias temperature instability; random telegraph noise; scaled high-κ nMOSFET; Charge carrier processes; Dielectrics; Fluctuations; Logic gates; MOSFETs; Noise; Stress; MOS transistor; Metal gate; PBTI; Random telegraph noise; high-κ; scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784475
  • Filename
    5784475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3379552