DocumentCode
3379596
Title
The differential efficiency of quantum well lasers
Author
Smowton, P.M. ; Blood, P.
Author_Institution
Dept. of Phys. Astron., Univ. of Wales Coll. of Cardiff, UK
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
51
Lastpage
52
Abstract
Using experimental measurements of spontaneous emission spectra, we have identified the components which determine the external differential injection efficiency of laser diodes. We have shown that, even though the emission from the n=l transition pins at threshold, there are contributions to /spl eta//sub o//sup d/ above threshold from both the stripe efficiency /spl eta//sub s//sup d/ and the injection efficiency /spl eta//sub i//sup d/, the latter being due to the absence of pinning outside the well.
Keywords
Fermi level; quantum well lasers; spontaneous emission; AlGaInP; GaInP; differential efficiency; external differential injection efficiency; injection efficiency; laser diodes; quantum well lasers; spontaneous emission spectra; stripe efficiency; threshold; Blood; Extraterrestrial measurements; Gain measurement; Laser theory; Pins; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553743
Filename
553743
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