• DocumentCode
    3379596
  • Title

    The differential efficiency of quantum well lasers

  • Author

    Smowton, P.M. ; Blood, P.

  • Author_Institution
    Dept. of Phys. Astron., Univ. of Wales Coll. of Cardiff, UK
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    51
  • Lastpage
    52
  • Abstract
    Using experimental measurements of spontaneous emission spectra, we have identified the components which determine the external differential injection efficiency of laser diodes. We have shown that, even though the emission from the n=l transition pins at threshold, there are contributions to /spl eta//sub o//sup d/ above threshold from both the stripe efficiency /spl eta//sub s//sup d/ and the injection efficiency /spl eta//sub i//sup d/, the latter being due to the absence of pinning outside the well.
  • Keywords
    Fermi level; quantum well lasers; spontaneous emission; AlGaInP; GaInP; differential efficiency; external differential injection efficiency; injection efficiency; laser diodes; quantum well lasers; spontaneous emission spectra; stripe efficiency; threshold; Blood; Extraterrestrial measurements; Gain measurement; Laser theory; Pins; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553743
  • Filename
    553743