Title :
Significantly enhanced SAW transmission in voltage tunable GaAs/LiNbO3 hybrid devices
Author :
Rotter, M. ; Ruile, Werner ; Bernklau, Daniela ; Riechert, Henning ; Wixforth, Achim
Author_Institution :
Corp. Technol., Siemens AG, Munchen, Germany
Abstract :
Thin GaAs quantum well structures fused onto LiNbO3 substrates using the epitaxial lift off technology offer the possibility to control the SAW velocity via field effect. The tunability of the conductivity in the GaAs quantum well results in a large change of the SAW velocity and phase. This effect is in general accompanied by an attenuation over a small region of conductivity, decreasing the device performance. We show that a lateral modulation of the in-plane conductivity distributes the SAW attenuation over the whole voltage tuning range. Employing this technique, the maximum attenuation of the hybrid SAW device is significantly reduced. Our approach opens new possibilities for voltage controlled SAW devices. Single-chip voltage controlled SAW oscillators, variable broadband delay lines and remote SAW voltage sensors can be realized
Keywords :
III-V semiconductors; gallium arsenide; lithium compounds; molecular beam epitaxial growth; quantum well devices; semiconductor growth; semiconductor quantum wells; surface acoustic wave delay lines; surface acoustic wave devices; surface acoustic wave oscillators; surface acoustic wave sensors; tuning; two-dimensional electron gas; voltage-controlled oscillators; 2D electron system; GaAs-LiNbO3; GaAs/LiNbO3 hybrid devices; LiNbO3; MBE layer; SAW phase; SAW velocity; conductivity tunability; continuous potential gradient; enhanced SAW transmission; epitaxial lift off technology; field effect; fused onto LiNbO3 substrates; in-plane conductivity; lateral modulation; maximum attenuation; multiple gate structures; remote SAW voltage sensors; single-chip voltage controlled SAW oscillators; thin quantum well structures; variable broadband delay lines; voltage controlled SAW devices; voltage tunable devices; Attenuation; Conductivity; Gallium arsenide; Substrates; Surface acoustic wave devices; Surface acoustic waves; Tuning; Velocity control; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762101
