A novel method to characterize and screen mobile ion contaminated nonvolatile memory products

Author

Shone, F. ; Liou, H. ; Pan, C. ; Woo, B. ; Holler, M.

Author_Institution

Memory Dept., Macronix Int. Co., Hsinchu, Taiwan

fYear

1991

fDate

22-24 May 1991

Firstpage

224

Lastpage

226

Abstract

Charge retention in EPROM single cell and memory arrays due to mobile ions has been extensively characterized. Through the study, it is realized that the impact of the contamination to the EPROM product lifetime can be seriously underestimated. By `selectively´ programming cells in the array and subjecting the parts to a bake, the contaminated parts can be much more reliably screened. Moreover, through the different amount of charge loss of programmed cells with different space apart, not only the amount of contamination can be quantified but also the diffusion coefficient and activation energy of mobile ions in the related thin film can also be derived

Keywords

EPROM; integrated circuit testing; integrated memory circuits; life testing; production testing; EPROM single cell; activation energy; bake; charge loss; charge retention; diffusion coefficient; memory arrays; mobile ion contaminated nonvolatile memory products; product lifetime; programmed cells; Contamination; Dielectric losses; Dielectric thin films; EPROM; Gettering; Nonvolatile memory; Packaging; Space charge; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-0036-X

Type

conf

DOI

10.1109/VTSA.1991.246677

Filename

246677