Neutron induced single event multiple transients with voltage scaling and body biasing

This paper presents measurement results of neutron induced SEMT (single event multiple transients). We devise an SEMT measurement circuit and evaluate the dependency of SEMT on supply and body voltages using test chips fabricated in a 65nm CMOS process. Measurement results show that transients can arise simultaneously at adjacent six inverters sharing the same well, and SEMT ratio to all the single event transients reaches 40% at 0.7 V with reverse body biasing. We also investigate the correlation between the spatial spreading of SEMT and the distance between sensitive nodes in layout. Furthermore, referring to the occurrence rates of single event single transient (SEST) and single event single upset (SESU), we validate the measured results.