• DocumentCode
    3379804
  • Title

    Determination of MOSFET´s channel doping profile right up to SiO 2/Si interface

  • Author

    Lin, Pole-Shang ; Wang, Chih-Hsien

  • Author_Institution
    ERSO/ITRI, Hsinchu, Taiwan
  • fYear
    1991
  • fDate
    22-24 May 1991
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    The threshold-voltage fitting method is proposed to determine the channel doping profile of both n-channel and counter-implantation p-channel MOSFET´s. The doping profile in the region near SiO2/Si interface, of depth less than the extrinsic Debye length, can be determined. The accuracy of the developed method has been tested through both the numerical simulation results and the experimental data. Quite good agreement has been obtained
  • Keywords
    doping profiles; insulated gate field effect transistors; semiconductor device models; semiconductor process modelling; PETS software; SiO2-Si interface; channel doping profile; counter-implantation p-channel; n-channel; nMOSFET; numerical simulation; pMOSFET; profile extractor and threshold simulator; threshold-voltage fitting method; Analytical models; Capacitance-voltage characteristics; Data mining; Doping profiles; Industrial electronics; MOSFET circuits; Positron emission tomography; Surface fitting; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0036-X
  • Type

    conf

  • DOI
    10.1109/VTSA.1991.246682
  • Filename
    246682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3379804