Title :
Surface acoustic wave properties on various rotated Y-cut langasite crystal substrates grown by Czochralski method
Author :
Kadota, Michio ; Nakanishi, Jun ; Kitamura, Takeshi ; Kumatoriya, Makoto
Author_Institution :
Murata Manuf. Co. Ltd., Kyoto, Japan
Abstract :
A langasite crystal has been paid to much attention as a substrate for surface acoustic wave (SAW) devices recently, because it has a larger electromechanical coupling factor (ks) than quartz and an excellent temperature coefficient of frequency (TCF) similar to quartz. A leaky SAW (LSAW) and a leaky pseudo SAW (LPSAW) of the various rotated Y cut langasite substrates grown by the Czochralski method were measured by an ultrasonic microscope. The measured results were compared with the theoretical values calculated by five kinds of material constants. The TCFs of Rayleigh SAW filters having various Al thickness of interdigital transducer (IDT) on various rotated Y plates were measured. It was clarified that (0°, 142°, 24.5°) and (0°, 143°, 24°) substrates showed turnover temperatures of 25°C and 30°C, and more excellent TCFs (1.83 and 1.63 ppm/°C) at normalized Al-IDT thickness 0.0125 compared with ones reported until now. Measured results of electromechanical coupling factor on their substrates showed almost equal values to theoretical ones
Keywords :
crystal growth from melt; gallium compounds; interdigital transducers; lanthanum compounds; piezoelectric materials; surface acoustic wave filters; surface acoustic wave transducers; surface acoustic waves; Czochralski method; La3Ga5SiO14; Rayleigh SAW filters; electromechanical coupling factor; interdigital transducer; leaky SAW; leaky pseudo SAW; rotated Y-cut langasite crystal substrates; surface acoustic wave; temperature coefficient of frequency; Acoustic waves; Frequency; Microscopy; Rotation measurement; SAW filters; Surface acoustic wave devices; Surface acoustic waves; Temperature; Ultrasonic transducers; Ultrasonic variables measurement;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762153