DocumentCode
3380179
Title
Al-plug stacked contact/via process for deep submicron CMOS multilayer metal technology
Author
Liou, F.-T. ; Chen, F.S. ; Dixit ; Zamanian, M. ; DeSanti, G.
Author_Institution
Sgs-Thomson Microelectron., Carrollton, TX, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
109
Lastpage
112
Abstract
The authors describe stacked contact/via technology with Al-plug metallization that results in complete filling of submicron contacts and vias of various sizes. The Al-plug process can be done in a conventional sputtering system. Physical and electrical characteristics of the Al-plug process are compared with conventional W-plug process. The implementation of Al-plug technology into submicron integrated circuits is presented
Keywords
CMOS integrated circuits; VLSI; aluminium; metallisation; sputter deposition; Al plug metallisation; IC implementation; VLSI; contact filling; deep submicron CMOS; multilayer metal technology; sputtering; stacked contact/via technology; via filling; Aluminum; CMOS process; CMOS technology; Contacts; Integrated circuit interconnections; Metallization; Nonhomogeneous media; Plugs; Sputter etching; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246700
Filename
246700
Link To Document