DocumentCode :
3380195
Title :
A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement
Author :
Rajabi, Saba ; Orouji, Ali Asghar ; Moghadam, H.A. ; Mahabadi, S. E. Jamali ; Fathipour, Morteza
Author_Institution :
Electr. Eng. Dept., Semnan Univ., Semnan, Iran
fYear :
2011
fDate :
21-22 July 2011
Firstpage :
675
Lastpage :
678
Abstract :
In this paper, we present an enhancement of breakdown voltage in AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility-transistor devices by introducing a magnesium doping layer in AlGaN buffer layer under the 2DEG channel. The optimized electron confinement and mitigated electric field peak under the drain side of the gate in DH-HEMT along with more evenly distributed electric field due to the presence of a charge balanced magnesium doping layer result in significant breakdown voltage improvement and subthreshold gate and drain leakage currents suppression. The introduced magnesium doping layer acts as a floating field plate. By optimizing the length of this float field plate, the breakdown voltage will increase by 90.5%, which is very important in higher voltage applications. This approach also allows a 33% decrease of the peak electric field under the drain side edge of the gate while the ON-state resistance is negligibly increased.
Keywords :
aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; 2DEG channel; AlGaN buffer layer; AlGaN-GaN-AlGaN; AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor; breakdown voltage; charge balanced magnesium doping layer; drain leakage currents suppression; mitigated electric field peak; optimized electron confinement; performance improvement; subthreshold gate; DH-HEMTs; Electric breakdown; Gallium nitride; Logic gates; MESFETs; MODFETs; AlGaN/GaN high electron mobility transistor (HEMT); breakdown voltage; double-heterojunction (DH)- HEMT; float field plate; magnesium doping layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Processing, Communication, Computing and Networking Technologies (ICSCCN), 2011 International Conference on
Conference_Location :
Thuckafay
Print_ISBN :
978-1-61284-654-5
Type :
conf
DOI :
10.1109/ICSCCN.2011.6024636
Filename :
6024636
Link To Document :
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