Title :
MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3 μm BH laser application
Author :
Takemi, M. ; Kimura, T. ; Suzuki, D. ; Shiba, T. ; Shibata, K. ; Mihashi, Y. ; Takamiya, S. ; Aiga, M.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H2S flow rates. It is found that the growth rate of the n-InP layer of the sidewall of the mesa is significantly affected by the H2S flow rate. Consequently the regrown shape of the embedding layer is found to be exactly controlled by the H2S flow rate. Using this technique, we have fabricated a p-substrate 1.3μm BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; semiconductor laser arrays; sputter etching; sulphur; vapour phase epitaxial growth; 1.3 mum; H2S; H2S flow rates; InP MOCVD regrowth; InP:S; RIE patterned substrates; dry-etched mesas; embedding layer; growth behavior; lasing characteristics; n-InP:S layers; p-substrate BH laser application; pnp current-blocking structure; reliability; Gases; Indium phosphide; Inductors; Laser applications; MOCVD; Masers; Scanning electron microscopy; Semiconductor laser arrays; Shape control; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492266
