• DocumentCode
    3380434
  • Title

    New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

  • Author

    Sagong, Hyun Chul ; Kang, Chang Yong ; Sohn, Chang-Woo ; Park, Min Sang ; Choi, Do-Young ; Jeong, Eui-Young ; Lee, Jack C. ; Jeong, Yoon-Ha

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    Hot carrier effects on RF small-signal parameters in high-k/metal gate nMOSFETs are characterized by DC and RF measurements. To explain the novel hot carrier-induced degradation, we suggest a modified surface channel resistance model that can be applied to both conventional SiO2 and high-k nMOSFETs.
  • Keywords
    MOSFET; hot carriers; DC measurement; RF measurement; RF small-signal parameters; high-k nMOSFETs; high-k/metal gate nMOSFETs; hot carrier degradation; hot carrier effects; hot carrier-induced degradation; surface channel resistance model; Capacitance; High K dielectric materials; Logic gates; MOSFETs; Radio frequency; Resistance; Stress; MOSFET; RF; high-k; hot carriers; resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784516
  • Filename
    5784516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380434