DocumentCode
3380467
Title
CMOS-Compatible Wafer-Level Microdevice-Distribution Technology
Author
Guerre, R. ; Drechsler, U. ; Jubin, D. ; Despont, M.
Author_Institution
IBM Zurich Res. Lab., Zurich
fYear
2007
fDate
10-14 June 2007
Firstpage
2087
Lastpage
2090
Abstract
We present a novel cost-efficient heterogeneous device integration method based on the distribution principle. This robust, CMOS back end of the line (BEOL) compatible, wafer-scale device- selective transfer method for the batch fabrication of Systems-On-Chip is especially suitable for MEMS and ICs. The strategy for device selectivity during bonding and debonding is presented, and the demonstration of the technology is accomplished using AFM cantilevers as test vehicle. We have successfully selected a fraction of AFM devices from a single high-device-density "source" wafer and distributed them to populate many lower-device-density "receiver" wafers.
Keywords
CMOS integrated circuits; atomic force microscopy; micromechanical devices; system-on-chip; wafer-scale integration; AFM cantilevers; CMOS-compatible wafer-level microdevice-distribution technology; MEMS; back end of the line; batch fabrication; heterogeneous device integration method; high-device-density; systems-on-chip; wafer-scale device-selective transfer method; CMOS technology; AFM; Heterogeneous device integration; Systems-On-Chip; wafer-scale 3D integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300576
Filename
4300576
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