Title :
Selective silylation and plasma patterning of photoresist in submicron lithography
Author :
Chen, Bomy ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
Recent results concerning selective vapor-phase silylation on conventional photoresists and subsequent pattern delineation of modified resists using reactive ion etching are presented. Four resist design guidelines for improved image contrast and resolution in submicron silylation lithography are introduced, the key mechanisms are discussed, the nonlinear resist development behavior is described, and an integrated model for selective silylation lithography is presented
Keywords :
integrated circuit technology; photoresists; sputter etching; image contrast; integrated model; modified resists; nonlinear resist development; pattern delineation; photoresist; plasma patterning; reactive ion etching; resist design guidelines; resolution; selective vapor-phase silylation; submicron lithography; Etching; Guidelines; Image resolution; Lithography; Optical imaging; Plasma applications; Plasma chemistry; Plasma materials processing; Resists; Substrates;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246718
