• DocumentCode
    3380822
  • Title

    Current status and future prospect of Phase Change Memory

  • Author

    Kim, Byeungchul ; Song, Yoonjong ; Ahn, Dongho ; Kang, YounSeon ; Jeong, Hoon ; Dongho Ahn ; Nam, Seokwoo ; Jeong, Gitae ; Chung, Chilhee

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    279
  • Lastpage
    282
  • Abstract
    This paper reviews recent progress and future outlook of PRAM as a promising candidate for emerging non-volatile memory. Electrical characteristics and reliability issues of PRAM with scale-down of the device dimension are discussed. Despite remarkable progress of PRAM properties in recent last decades, there are still several fundamental issues to resolve for broadening its application area. Several suggestions to overcome these property issues are introduced with recent experimental results.
  • Keywords
    circuit reliability; phase change memories; PRAM; electrical characteristic; nonvolatile memory; phase change memory; reliability; Nonvolatile memory; Phase change random access memory; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157176
  • Filename
    6157176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380822