Novel RRAM programming technology for instant-on and high-security FPGAs

This paper introduces a novel RRAM programming technology to improve the security and shorten the startup time of FPGAs. A 9T2R nonvolatile SRAM (nvSRAM) cell is comprised of two 1T1R RRAM cells and a standard 6T SRAM cell on a single die by integrating the RRAM technology into the standard logic process. The 9T2R cell stores the configuration bit in the two 1T1R cells in complementary style and can quicky read it into the SRAM cell in less than 300 ps at power-on. Besides, the proposed RRAM programming technology excels SRAM in dynamic reconfiguration for less interrupt time or small area overhead. A testchip of a 2-input LUT with the proposed RRAM programming technology has been demonstated in 0.13μm logic technology.