DocumentCode
3380945
Title
A 55nm ultra high density two-port register file compiler with improved write replica technique
Author
Zhang, Zhao-Yong ; Zhang, Li-Jun ; Zhang, Yi-Ping ; Huang, Rui-Feng ; Wu, Shou-Dao ; Zheng, Jian-Bin
Author_Institution
Dept. of Memory Design, AiceStar Technol. Corp., Suzhou, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
303
Lastpage
306
Abstract
In this paper a two-port register file (RF) compiler with ultra high density design is presented. The memory implemented using a single port memory core, which is combined with a smart address selector circuit to reduce peripheral devices number and thus the silicon area is decreased significantly. The separate read and write replica scheme are implemented, with the improved write replica technique the memory compiler can accurately track the write timing over a wide range of memory array sizes and PVT variation. A test-chip with 13 embedded RF memories has been fabricated in UMC 55nm logic standard performance low-K process. The ultra high density design can markedly save 44.0% silicon area compared to conventional two-port RF (with 8T dual-port memory core) and only 4.3% area overhead compared to single-port RF (with 6T single-port memory core) for a 55nm 72Kb memory.
Keywords
SRAM chips; compiler generators; integrated circuit design; logic circuits; replica techniques; logic standard performance low-K process; memory compiler; single port memory core; size 55 nm; smart address selector circuit; ultra high density two-port register file compiler; write replica technique; Decoding; Foundries; Radio frequency; Register file compiler; address selector; replica technique; self-timed write; two-port memory;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157182
Filename
6157182
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