DocumentCode :
3381005
Title :
A 90 nm 16 Mb embedded phase-change memory macro with write current smoothing and enhanced write bandwidth
Author :
Hong, Hongwei ; Li, Zheng ; Li, Qin ; Wang, Ruizhe ; Hwang, Charlie
Author_Institution :
BAMC-BJ Corp., Beijing, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
315
Lastpage :
318
Abstract :
This paper presents a 16 Mb embedded phase change memory macro based on a 90 nm 6ML technology. The memory macro consists of two logical banks. The major challenge in ePCM is its low write bandwidth in comparison to its read bandwidth due to high programming currents. This macro achieves a high bandwidth up to 12 MB/s, which is attributed to the write current smoothing and power saving techniques.
Keywords :
phase change memories; bit rate 12 Mbit/s; embedded phase-change memory macro; logical bank; memory size 16 MByte; power saving technique; size 90 nm; write bandwidth enhancement; write current smoothing; Bandwidth; Postal services; System-on-a-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157185
Filename :
6157185
Link To Document :
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