A 90 nm 16 Mb embedded phase-change memory macro with write current smoothing and enhanced write bandwidth

This paper presents a 16 Mb embedded phase change memory macro based on a 90 nm 6ML technology. The memory macro consists of two logical banks. The major challenge in ePCM is its low write bandwidth in comparison to its read bandwidth due to high programming currents. This macro achieves a high bandwidth up to 12 MB/s, which is attributed to the write current smoothing and power saving techniques.