DocumentCode :
3381270
Title :
High performance and miniature thin film bulk acoustic wave filters for 5 GHz
Author :
Nishihara, T. ; Yokoyama, T. ; Miyashita, T. ; Satoh, Y.
Author_Institution :
Peripheral Syst. Labs., Fujitsu Labs. Ltd., Akashi, Japan
Volume :
1
fYear :
2002
fDate :
8-11 Oct. 2002
Firstpage :
969
Abstract :
Fujitsu has developed high-performance, miniature aluminum nitride (AlN) thin Film Bulk Acoustic Resonators (FBAR) filters for 5-GHz Wireless Local Area Network (WLAN) applications. Filters with higher frequencies of around 5 GHz and wider bandwidths will be needed in future mobile communication systems. Therefore, we developed filters using thin-film Bulk Acoustic Wave (BAW) technology, which shows promise as a possible solution to these higher frequency applications. There are two issues related to the development of FBAR filters. The first has been the need for miniaturization. To achieve this, we developed a new resonator configuration that employs bulk micromachining techniques. The second issue has been to increase the bandwidth. Five-GHz WLAN applications require a 200-MHz bandwidth at 5250 MHz, which corresponds to a fractional bandwidth of 3.8%. However, the piezoelectric coupling coefficient (k2) of AlN cannot satisfy this requirement. To achieve wider filter bandwidth, we developed two approaches. They utilize epitaxial AlN film-growth and reactance-controlled flip-chip package design technologies. The packaging technology also enabled us to miniaturize the filters.
Keywords :
III-V semiconductors; aluminium compounds; flip-chip devices; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; surface acoustic wave resonator filters; wide band gap semiconductors; wireless LAN; 200 MHz; 5 GHz; 5250 MHz; AlN; AlN filters; bandwidth; bulk micromachining techniques; fractional bandwidth; high performance; higher frequency applications; miniature thin film bulk acoustic wave filters; miniaturization; mobile communication systems; piezoelectric coupling coefficient; reactance-controlled flip-chip package design technologies; thin film bulk acoustic resonators filters; wider bandwidths; Acoustic applications; Acoustic waves; Aluminum nitride; Bandwidth; Film bulk acoustic resonators; Frequency; Packaging; Resonator filters; Transistors; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
ISSN :
1051-0117
Print_ISBN :
0-7803-7582-3
Type :
conf
DOI :
10.1109/ULTSYM.2002.1193557
Filename :
1193557
Link To Document :
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