Title :
1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer
Author :
Kurakake, H. ; Uchida, T. ; Higashi, T. ; Ogita, S. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.
Keywords :
Debye temperature; III-V semiconductors; claddings; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 mum; 110 K; AlGaInAs; AlGaInAs SCH layer; AlGaInAs SCH layers; InGaAs; InGaAs double QW laser; InGaP; InGaP clad laser; hetero-epitaxial InGaAs buffer layer; high T/sub 0/ strained MQW laser; high characteristic temperature; high optical confinement; Buffer layers; Indium gallium arsenide; Optical buffering; Optical refraction; Optical variables control; Optical waveguides; Photonic band gap; Quantum well devices; Temperature; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553753
