Title :
Low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers by rapid thermal annealing
Author :
Ko, Jack ; Chen, Ching-Hui ; Coldren, Larry A. ; Hu, Evelyn L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
With post-growth rapid thermal annealing (RTA), 818 nm strained Al/sub 0.15/In/sub 0.25/Ga/sub 0.6/As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm/sup 2/ per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA with 62% differential quantum efficiency.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; rapid thermal annealing; ridge waveguides; semiconductor growth; waveguide lasers; 5 mA; 62 percent; 818 nm; AlInGaAs-AlGaAs; MBE; differential quantum efficiency; low threshold MBE-grown AlInGaAs-AlGaAs strained multiquantum-well lasers; low threshold current density; post-growth rapid thermal annealing; pulsed threshold current; rapid thermal annealing; ridge waveguide lasers; solid source molecular beam epitaxy; Gallium arsenide; Gas lasers; Laser modes; Molecular beam epitaxial growth; Optical pulses; Pump lasers; Quantum well lasers; Rapid thermal annealing; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553755
