• DocumentCode
    3382250
  • Title

    Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

  • Author

    Mei, Guanghui ; Li, Peicheng ; Hu, Guangxi ; Liu, Ran ; Tang, Tingao

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    555
  • Lastpage
    557
  • Abstract
    In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (VTH) shift of the surrounding-gate (SG) MOSFETs. We show how VTH is influenced with QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. When the radius of an SG MOSFET is small (<;3nm), the VTH shift will be significant, and one should be careful in the use of a device with an extremely small silicon body radius. The analytical results are compared with those obtained by B. Yu et al., and good agreement is observed.
  • Keywords
    MOSFET; quantum theory; semiconductor device models; semiconductor doping; QM effects; SG MOSFET; Si; quantum mechanical effects; silicon body radius; silicon orientation; surrounding-gate MOSFET; threshold voltage shift; Lead; MOSFET circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157265
  • Filename
    6157265
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3382250