DocumentCode :
3382747
Title :
An efficient 90nm technology-node GHz transceiver of on-chip global interconnect
Author :
Zheng, Zaixiao ; Mao, Zhigang ; Jiang, Jianfei
Author_Institution :
Dept. of Microelectron., Shanghai JiaoTong Univ., Shanghai, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
649
Lastpage :
652
Abstract :
Today high speed signal transmission system for on chip global interconnect requires elaborate design of the transceiver. The design goal of transceiver is to ensure the transmission obtains an improvement in latency and power, which are the two most important factors in high speed transmission. In this paper, we present an efficient structured transceiver which implements low swing technology based on the differential structure with the accurate modeling of the on chip global interconnect. And we give the principals of the structure and compare the optimized simulation results with the traditional inverter insertion method used to decrease the delay of the global interconnect. Our transceiver design is based on the 90nm CMOS technology and TSMC 90nm interconnect structure on Metal 5. The global interconnect length we focus on is the general length 10mm. Compared to repeater insertion, this system has a latency advantage of 17% and remarkable advantage in power up to 33.9%.
Keywords :
high-speed integrated circuits; integrated circuit interconnections; transceivers; high speed signal transmission system; inverter insertion method; on-chip global interconnect; size 90 nm; transceiver; Conductivity; Delay; Physics; Radio access networks; Repeaters; Robustness; Transceivers; 3-D multi-level modeling; 90nm technology; Differential transmission; Low swing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157289
Filename :
6157289
Link To Document :
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