Title :
Effect of process control in oxide-confined top-emitting lasers
Author :
Li, M.Y. ; Wupen Yuen ; Li, G.S. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 μm is required to render high yield, single mode, oxide confined GaAs QW VCSELs.
Keywords :
III-V semiconductors; gallium arsenide; laser modes; oxidation; process control; quantum well lasers; surface emitting lasers; 1 mum; GaAs; aperture size; high yield single mode oxide confined GaAs QW VCSELs; oxide-confined top-emitting lasers; process control; stringent oxidation accuracy; Apertures; Laser modes; Laser theory; Oxidation; Polarization; Process control; Quantum well lasers; Ring lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553758
