DocumentCode :
3382797
Title :
A Silicon Carbide Capacitive Pressure Sensor for High Temperature and Harsh Environment Applications
Author :
Chen, Li ; Mehregany, Mehran
Author_Institution :
Case Western Reserve Univ., Cleveland
fYear :
2007
fDate :
10-14 June 2007
Firstpage :
2597
Lastpage :
2600
Abstract :
We report the first all-Silicon Carbide (SiC) capacitive pressure sensor - incorporating a SiC diaphragm on a SiC substrate - to measure pressure in high temperature and harsh environments, for example, propulsion and power systems. Measurements of pressures up to 700 psi and temperatures up to 574degC are demonstrated. An instrumentation amplifier is used to convert capacitance into voltage for measurements up to 300degC; beyond 300degC, the capacitance is measured directly from an array of identical sensor elements using a LCZ meter. Even after high temperature soaking, the packaged sensors show stable operation after several tens of thermal and pressure cycles.
Keywords :
amplifiers; capacitive sensors; pressure measurement; pressure sensors; LCZ meter; SiC; harsh environment; high temperature; instrumentation amplifier; pressure measurement; silicon carbide capacitive pressure sensor; Capacitance measurement; Capacitive sensors; Power measurement; Power system measurements; Pressure measurement; Propulsion; Sensor arrays; Sensor systems; Silicon carbide; Temperature sensors; Capacitive; Harsh Environment; Pressure Sensor; Silicon Carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
Type :
conf
DOI :
10.1109/SENSOR.2007.4300703
Filename :
4300703
Link To Document :
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