DocumentCode :
33828
Title :
Latch-Up Protection Design With Corresponding Complementary Current to Suppress the Effect of External Current Triggers
Author :
Hui-Wen Tsai ; Ming-Dou Ker
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
15
Issue :
2
fYear :
2015
fDate :
Jun-15
Firstpage :
242
Lastpage :
249
Abstract :
The robustness against latch-up in the integrated circuits can be improved by supporting complementary current at the pad under the latch-up current test (I-test). By inserting additional junctions to form parasitic bipolar sensors, the external trigger can be monitored, and the ESD protection devices can be applied to provide such current and decrease the related perturbation to the internal circuits. The proposed design and the previous work with a single guard ring have been fabricated in the same 0.5-μm 5-V process. The experimental results confirm the enhanced latch-up tolerance of this work and the practicability in the SOC era.
Keywords :
CMOS digital integrated circuits; electrostatic discharge; flip-flops; integrated circuit design; integrated circuit testing; system-on-chip; tolerance analysis; trigger circuits; ESD protection devices; SOC; complementary current; electrostatic discharge; external current trigger effect suppression; integrated circuits; latch-up current test; latch-up protection design; latch-up tolerance; parasitic bipolar sensors; size 0.5 mum; voltage 5 V; CMOS integrated circuits; Electrostatic discharges; Junctions; Layout; Materials reliability; Sensors; Latch-up; Latchup; electrostatic discharge (ESD) protection; guard ring;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2015.2424377
Filename :
7089270
Link To Document :
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