Resonant tunneling in GaAs-AlAs double barriers

This paper presents the calculation of the transmission coefficients for the GaAs-AlAs double barriers with rectangular well and with triangular well, respectively, for various values of the incident electron energy. The utilized method is based on the transmission line analogy of resonance tunneling phenomena and the generalization of the impedance concept. To our knowledge, this is the first study on the resonant tunneling effect of a double barrier with triangular well. Also, we generalized the method for the investigation of the resonant electron transfer in semiconductor heterostructures in the presence of an applied electric field