Title :
A subthreshold MOSFET bandgap reference with ultra-low power supply voltage
Author :
Li, Yilei ; Wang, Yu ; Yan, Na ; Tan, Xi ; Min, Hao
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A novel bandgap reference (BGR) with ultra low supply voltage is presented. The proposed bandgap reference uses subthreshold MOSFETs to provide temperature compensation. Analysis and comparison between proposed bandgap and conventional current-mode bandgap are made, and it is shown that when working with low supply voltage, the proposed bandgap is less sensitive to mismatch and power supply noise. The bandgap reference is implemented in SMIC 0.13μm RF technology, and simulation results show that it can provide the output voltage of 429 mV with a supply voltage as low as 0.6 V.
Keywords :
MOSFET; energy gap; low-power electronics; SMIC RF technology; current-mode bandgap; size 0.13 mum; subthreshold MOSFET bandgap reference; temperature compensation; ultra-low power supply voltage; voltage 0.6 V; voltage 429 mV; CMOS integrated circuits; CMOS technology; Logic gates; Photonic band gap; Radio frequency;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157341
