Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique

Author

Gilor, Joseph ; Blumin, Marina ; Samid, Llan ; Fekete, Dan

Author_Institution

Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1996

fDate

13-18 Oct. 1996

Firstpage

95

Lastpage

96

Abstract

A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; optimisation; quantum well lasers; semiconductor device models; semiconductor growth; spectral line broadening; vapour phase epitaxial growth; AlInGaAs; AlInGaAs single quantum well lasers; growth parameter optimization process; growth parameters optimization technique; pseudomorphic quaternary; pulsed threshold current density; quaternary quantum wells line width broadening model; very low threshold current density; Chemical lasers; Laser modes; Laser theory; Pulsed laser deposition; Pump lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1996., 15th IEEE International

Conference_Location

Haifa, Israel

Print_ISBN

0-7803-3163-X

Type

conf

DOI

10.1109/ISLC.1996.553764

Filename

553764