DocumentCode
3385407
Title
Clocked semi-floating-gate ultra low-voltage current mirror
Author
Berg, Y. ; Mirmotahari, O. ; Aunet, S.
Author_Institution
Dept. of Inf., Univ. of Oslo, Oslo
fYear
2008
fDate
Aug. 31 2008-Sept. 3 2008
Firstpage
1038
Lastpage
1041
Abstract
In this paper we present a low voltage current mirror based on clocked semi-floating-gate transistors used in low-voltage digital CMOS circuits. By imposing offsets to semi-floating-gate nodes the current level may be increased while maintaining a very low supply voltage. The offset voltages are used to shift the effective threshold voltage of the evaluating transistors. The proposed current mirror can operate at supply voltages below 200 mV. Two different current mirrors are described; the common gate- and the split gate current mirror. The simulated data presented are obtained using the Spectre simulator provided by Cadence and valid for a 90 nm CMOS process.
Keywords
CMOS digital integrated circuits; MOSFET; current mirrors; MOS transistors; Spectre simulator; clocked semi-floating-gate transistors; low-voltage current mirror; low-voltage digital CMOS circuits; offset voltages; size 90 nm; threshold voltage; Analog circuits; CMOS logic circuits; CMOS process; CMOS technology; Circuit simulation; Clocks; Logic circuits; Low voltage; Mirrors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location
St. Julien´s
Print_ISBN
978-1-4244-2181-7
Electronic_ISBN
978-1-4244-2182-4
Type
conf
DOI
10.1109/ICECS.2008.4675034
Filename
4675034
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