• DocumentCode
    3385407
  • Title

    Clocked semi-floating-gate ultra low-voltage current mirror

  • Author

    Berg, Y. ; Mirmotahari, O. ; Aunet, S.

  • Author_Institution
    Dept. of Inf., Univ. of Oslo, Oslo
  • fYear
    2008
  • fDate
    Aug. 31 2008-Sept. 3 2008
  • Firstpage
    1038
  • Lastpage
    1041
  • Abstract
    In this paper we present a low voltage current mirror based on clocked semi-floating-gate transistors used in low-voltage digital CMOS circuits. By imposing offsets to semi-floating-gate nodes the current level may be increased while maintaining a very low supply voltage. The offset voltages are used to shift the effective threshold voltage of the evaluating transistors. The proposed current mirror can operate at supply voltages below 200 mV. Two different current mirrors are described; the common gate- and the split gate current mirror. The simulated data presented are obtained using the Spectre simulator provided by Cadence and valid for a 90 nm CMOS process.
  • Keywords
    CMOS digital integrated circuits; MOSFET; current mirrors; MOS transistors; Spectre simulator; clocked semi-floating-gate transistors; low-voltage current mirror; low-voltage digital CMOS circuits; offset voltages; size 90 nm; threshold voltage; Analog circuits; CMOS logic circuits; CMOS process; CMOS technology; Circuit simulation; Clocks; Logic circuits; Low voltage; Mirrors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
  • Conference_Location
    St. Julien´s
  • Print_ISBN
    978-1-4244-2181-7
  • Electronic_ISBN
    978-1-4244-2182-4
  • Type

    conf

  • DOI
    10.1109/ICECS.2008.4675034
  • Filename
    4675034