Title :
Resistive extraction of polysilicon gate linewidth
Author :
Miles, Glen ; Hook, Terence ; Faucher, Margaret ; Morrett, Kent
Author_Institution :
IBM Microelectron. Div., Essex Junction, VT, USA
Abstract :
The polysilicon gate linewidth manufacturing control strategy typically includes an electrical resistance measurement to extract the gate dimension. The extraction method usually assumes that wide (reference) and narrow (gate dimension) resistors have the same absolute sheet resistance. However, upon deeper examination, we found that this assumption is frequently invalid, submicron resistors do not necessarily have the same sheet resistance as wide resistors. Moreover, N-type and P-type narrow resistors exhibit quite divergent behaviors
Keywords :
electric resistance measurement; elemental semiconductors; semiconductor technology; silicon; Si; electrical resistance measurement; gate dimension extraction; manufacturing control; polysilicon gate linewidth; resistor; sheet resistance; CMOS technology; Capacitors; Electric resistance; Electrical resistance measurement; Manufacturing; Microelectronics; Oxidation; Resistors; Rivers; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-4050-7
DOI :
10.1109/ASMC.1997.630699
