Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy

Author

Chen, J.X. ; Li, A.Z. ; Zhang, Y.G. ; Ren, Y.C. ; Qi, M.

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

fYear

1996

fDate

21-25 Apr 1996

Firstpage

525

Lastpage

528

Abstract

In this paper, we report the growth of device quality InGaAs/InAlAs/InP materials by gas source molecular beam epitaxy (GSMBE) and their applications to HEMTs and MSM-PDs. Larger conduction band discontinuity and larger electron mobility which led to improved electrical performance of HEMT materials and devices can be obtained by adoption of dual strained InGaAs channel layer and InAlAs Schottky layer

Keywords

III-V semiconductors; Schottky effect; aluminium compounds; chemical beam epitaxial growth; conduction bands; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; interface states; metal-semiconductor-metal structures; photodetectors; semiconductor growth; semiconductor heterojunctions; GSMBE; HEMT; InAlAs Schottky layer; InGaAs-InAlAs-InP; MSM-PD; conduction band discontinuity; device quality InGaAs/InAlAs/InP heterostructures; dual strained InGaAs channel layer; electrical performance; electron mobility; gas source molecular beam epitaxy; growth; metal-semiconductor-metal photodetectors; Cutoff frequency; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492299

Filename

492299