Temperature dependence of electron and hole ionization coefficients in InP

In this work we investigate the temperature dependence of the electron and hole ionization coefficients in ⟨100⟩ InP from 50 K to room temperature. We use InP/InGaAs p⁺n junctions to accurately measure the dependence of the breakdown voltage on the temperature. From the data measured during processing, we evaluate the doping profiles and the depths of the various layers. Then we compute the electric field in the high field region. In order to take into account the dependence of the ionization coefficients on both the electric field and the temperature, we use a physical model. By adjusting the only fitting parameter, we obtain complete expressions for α(E,T) and β(E,T), in good agreement with other published data