DocumentCode :
3386304
Title :
New semiconducting GeSe3-FeSe2-Ag2Se glasses as membranes for Fe(III) ion-selective electrodes
Author :
Hadjiniltolova, S. ; Boycheva, Silvia ; Vassilev, Venceslav ; Ivanova, Zoja G.
Author_Institution :
Inst. of Glass Ceramics, Sofia, Bulgaria
Volume :
2
fYear :
1999
fDate :
36434
Firstpage :
507
Abstract :
The glass-forming region and some basic physicochemical parameters (temperatures of phase transformations, density and microhardness) of the GeSe3-FeSe2-Ag2Se system have been determined. Membranes of the (GeSe3)85/(FeSe2 )10(Ag2Se), (GeSe3)81(FeSe2)14(Ag2 Se)5 and (GeSe3)76(FeSe2 )9(Ag2Se)15 compositions for Fe(III) ion-selective electrodes have been studied. They have been characterized by the linear range and slope of electrode function, limits of detection and pH-working interval
Keywords :
chalcogenide glasses; density; electrochemical electrodes; germanium compounds; iron compounds; membranes; microhardness; silver compounds; solid-state phase transformations; Fe(III) ion selective electrode; GeSe3-FeSe2-Ag2Se; density; membrane; microhardness; phase transformation temperature; semiconducting GeSe3-FeSe2-Ag2Se glass; Amorphous semiconductors; Biomembranes; Conductivity; Crystallization; Electrodes; Glass; Semiconductivity; Solids; Temperature; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
Type :
conf
DOI :
10.1109/SMICND.1999.810596
Filename :
810596
Link To Document :
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