High boron doped etch stop technique used in micromachining of silicon membranes and cantilevers [and optomechanical microsensor application]

Author

Muller, Raluca ; Manea, E. ; Pavelescu, Ioan

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

Volume

2

fYear

1999

fDate

36434

Firstpage

527

Abstract

This paper describes the manufacture of three dimensional microstructures, using p⁺ etch stop techniques. Our experiments focused on bulk and front side micromachining and the integration of these structures with optical waveguides for microsensors with optical read-out applications. By annealing treatment we reduce the tensile stress induced in the cantilever beams

Keywords

Mach-Zehnder interferometers; annealing; boron; elemental semiconductors; etching; heavily doped semiconductors; membranes; micro-optics; micromachining; microsensors; optical fabrication; optical planar waveguides; silicon; Mach-Zehnder interferometer; Si:B; anisotropic etching; annealing treatments; bulk micromachining; cantilevers; front side micromachining; high boron doped etch stop technique; integrated optics element; integration with optical waveguides; membranes; optical read-out application; optomechanical microsensors; p⁺ etch stop; tensile stress reduction; three dimensional microstructures; Annealing; Boron; Etching; Integrated optics; Micromachining; Microsensors; Microstructure; Optical waveguides; Pulp manufacturing; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810601

Filename

810601