Comparison of low leakage and high speed deep submicron PMOSFETs submitted to hole injections

We have compared the worst-case of HC degradation between Low Leakage (LL) and High Speed (HS) p-channel MOSFET´s which is found under Channel Hot-Hole (CHH) injections as the electron trapping is vanishing with the reduction of the gate-oxide thickness. We focus on the distinction between HH injection and the direct tunneling of holes which is measured even at low voltage in the state-of the art 2.1 nm thick gate-oxide MOSFET´s. This latter effect has been included in the Charge-Pumping (CP) analysis showing no strong effect when using appropriate measurement conditions by I_CP-V_GL (V_GH) curves in contrast to the standard fixed amplitude technique. LL and HS devices have shown distinct behaviors under uniform and localized CHH injections related to the different contributions of the degraded regions. CHH damage shows that for a same interface trap generation LL devices exhibit a stronger effect on the transistor performances due to the defect above the channel while HS devices have a larger degradation in the gate-drain overlap region. This is explained by the location of the peak lateral field and damage extent between both devices.