Title :
Electromigration simulation in Cu-low-K multilevel interconnect segments
Author :
Sukharev, V. ; Choudhury, Ruchika ; Park, C.W.
Author_Institution :
LSI Logic Corp., Milpitas, CA, USA
Abstract :
We present a physically based simulation model of electromigration (EM) induced failure development. Transient, 3-D, fully linked multiphysics simulation scheme has been developed on the basis of the proposed model. Simulations have been done on the realistic interconnect structures. Obtained simulation results have been found to fit well to available experimental data regarding the location of void nucleation sites and grow kinetics.
Keywords :
circuit simulation; copper; electromigration; failure analysis; integrated circuit interconnections; voids (solid); electromigration induced failure; electromigration simulation; fully linked multiphysics simulation; grow kinetics; multilevel interconnect segments; void nucleation sites; Aluminum; Conductors; Copper; Electromigration; Geometry; Large scale integration; Metallization; Solid modeling; Stress; Temperature distribution;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN :
0-7803-7558-0
DOI :
10.1109/IRWS.2002.1194233
