DocumentCode
3386567
Title
Electromigration simulation in Cu-low-K multilevel interconnect segments
Author
Sukharev, V. ; Choudhury, Ruchika ; Park, C.W.
Author_Institution
LSI Logic Corp., Milpitas, CA, USA
fYear
2002
fDate
21-24 Oct. 2002
Firstpage
55
Lastpage
61
Abstract
We present a physically based simulation model of electromigration (EM) induced failure development. Transient, 3-D, fully linked multiphysics simulation scheme has been developed on the basis of the proposed model. Simulations have been done on the realistic interconnect structures. Obtained simulation results have been found to fit well to available experimental data regarding the location of void nucleation sites and grow kinetics.
Keywords
circuit simulation; copper; electromigration; failure analysis; integrated circuit interconnections; voids (solid); electromigration induced failure; electromigration simulation; fully linked multiphysics simulation; grow kinetics; multilevel interconnect segments; void nucleation sites; Aluminum; Conductors; Copper; Electromigration; Geometry; Large scale integration; Metallization; Solid modeling; Stress; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2002. IEEE International
Print_ISBN
0-7803-7558-0
Type
conf
DOI
10.1109/IRWS.2002.1194233
Filename
1194233
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