• DocumentCode
    3386948
  • Title

    Event-based color change pixel in standard CMOS

  • Author

    Berner, Raphael ; Delbruck, Tobi

  • Author_Institution
    Inst. of Neuroinf., Univ. of Zurich, Zurich, Switzerland
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    349
  • Lastpage
    352
  • Abstract
    This paper describes a novel dichromatic spiking pixel circuit that reacts to color change but not to intensity change. It is built in standard CMOS using a buried double junction to sense wavelength information. The pixel can detect light wavelength changes of about 14nm, while not responding to intensity steps of at least a factor of three. The pixel is suitable for integration into an array and can easily be combined with a temporal log intensity contrast change pixel.
  • Keywords
    CMOS image sensors; image colour analysis; optical sensors; buried double junction; dichromatic spiking pixel circuit; event-based color change pixel; light wavelength detection; optical sensor; standard CMOS; Absorption; CMOS image sensors; CMOS process; Circuits; Color; Delay; Optical reflection; Optical sensors; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537787
  • Filename
    5537787