DocumentCode
3386948
Title
Event-based color change pixel in standard CMOS
Author
Berner, Raphael ; Delbruck, Tobi
Author_Institution
Inst. of Neuroinf., Univ. of Zurich, Zurich, Switzerland
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
349
Lastpage
352
Abstract
This paper describes a novel dichromatic spiking pixel circuit that reacts to color change but not to intensity change. It is built in standard CMOS using a buried double junction to sense wavelength information. The pixel can detect light wavelength changes of about 14nm, while not responding to intensity steps of at least a factor of three. The pixel is suitable for integration into an array and can easily be combined with a temporal log intensity contrast change pixel.
Keywords
CMOS image sensors; image colour analysis; optical sensors; buried double junction; dichromatic spiking pixel circuit; event-based color change pixel; light wavelength detection; optical sensor; standard CMOS; Absorption; CMOS image sensors; CMOS process; Circuits; Color; Delay; Optical reflection; Optical sensors; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537787
Filename
5537787
Link To Document