Title :
An integrated SOI high voltage device with a ring drain
Author :
Fang, Jian ; Zhou, Xianda ; Liu, Zhe ; Li, Zhaoji ; Zhang, Bo
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel SOI high voltage device with a ring drain is developed. Junction curvature is introduced to enhance the breakdown voltage. As an example, Breakdown voltage over 600 V is achieved in a SOI LDMOS on the SOI material with 3 mum buried oxide and 20 mum silicon. Compared with normal structure, the breakdown voltage is increased by 6.74% and the on resistance is increased merely by 2.14%.The ring drain is compatible with standard CMOS-DMOS process and the new structure can be integrated without additional process.
Keywords :
CMOS integrated circuits; silicon-on-insulator; CMOS-DMOS process; SOI LDMOS; SOI high voltage device; breakdown voltage; junction curvature; ring drain; size 20 mum; size 3 mum; voltage 600 V; Breakdown voltage; Dielectrics and electrical insulation; Doping; Gaussian processes; Integrated circuit technology; Materials science and technology; Neural networks; Semiconductor process modeling; Silicon;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250429
