Title :
Effects of a multi-recessed gate in microwave 4H-SiC power MESFETs
Author :
Deng, Xiaochuan ; Zhen Feng ; Zhang, Bo ; Zhaoji Li ; Li, Zhaoji
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Multi-recessed gate 4H-SiC MESFETs with a gate periphery of 5-mm are fabricated and characterized. The multi-recessed region under the gate terminal are applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device. The experimental results demonstrate that microwave output power density, power gain and power-added efficiency (PAE) for a multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1 dB and 7% higher than those of the conventional devices fabricated in this work using the same process.
Keywords :
microwave field effect transistors; power MESFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; SiC; current path; efficiency 7 percent; gain 1.1 dB; gate terminal; gate-drain breakdown voltage; microwave output power density; microwave power MESFET fabrication; multifinger gate periphery; multirecessed gate effects; power-added efficiency; size 5 mm; trapping-induced instabilities; Application specific integrated circuits; Fabrication; Laboratories; MESFETs; Microwave devices; Microwave technology; Radio frequency; Silicon carbide; Thermal conductivity; Thin film devices;
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
DOI :
10.1109/ICCCAS.2009.5250434
