Growth, characterizations, theory and lasing of vertically stacked quantum dots

Author

Grundmann, M. ; Ledentsov, N.N. ; Heitz, R. ; Bimberg, D. ; Ustinov, V.M. ; Egorov, A.Yu. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Kosogov, A.O. ; Werner, P. ; Heydenreich, J. ; Gösele, U.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

738

Lastpage

741

Abstract

We investigate multiple sheets of self-organized InAs quantum dots (QDs) with thin GaAs spacer layers. The QDs spontaneously form on top of each other and couple electronically. In comparison to single sheets of QDs (SQDs), the coupling leads to lower energy levels and an expansion of the wavefunction. Thus carrier localization and gain increase. Three-dimensional strain distribution and electronic structure are theoretically modeled. Laser operation of vertically coupled quantum dots (VECOD´s) improves largely as compared to SQD lasers and room temperature operation with a threshold of 680 A/cm² is obtained for a triple stack

Keywords

III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum dots; InP; VECODs; carrier localization; electronic coupling; electronic structure; energy levels; gain; growth; lasing; multiple sheets; room temperature operation; self-organization; three-dimensional strain distribution; threshold current density; vertically stacked quantum dots; wavefunction; Capacitive sensors; Fluctuations; Gallium arsenide; Laser modes; Laser theory; Quantum dot lasers; Quantum dots; Quantum mechanics; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492401

Filename

492401