Pulsed laser deposition of doped epitaxial compound semiconductor films

Author

Pedraza, A.J. ; Lowndes, D.H. ; Roulieau, C.M. ; Geohegan, D.B. ; Puretzky, A.A. ; Strauss, M.A.

Author_Institution

Div. of Solid State, Oak Ridge Nat. Lab., TN, USA

fYear

1996

fDate

5-9 Aug. 1996

Firstpage

34

Lastpage

35

Abstract

The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. The authors consider this process for the growth of structurally high quality and highly doped epitaxial II-VI and I-III-VI materials.

Keywords

II-VI semiconductors; heavily doped semiconductors; pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; ternary semiconductors; vapour phase epitaxial growth; complex multi-element materials; doped epitaxial compound semiconductor films; highly doped epitaxial I-III-VI materials; highly doped epitaxial II-VI materials; pulsed laser ablation; pulsed laser deposition; II-VI semiconductor materials; Laser ablation; Laser applications; Optical materials; Optical pulses; Programmable logic arrays; Pulsed laser deposition; Semiconductor films; Semiconductor lasers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:

Conference_Location

Keystone, CO, USA

Print_ISBN

0-7803-3175-3

Type

conf

DOI

10.1109/LEOSST.1996.540667

Filename

540667