Fabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities

Author

Schur, R. ; Nishioka, M. ; Kitamura, M. ; Watabe, H. ; Arakawa, Y.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1996

fDate

21-25 Apr 1996

Firstpage

750

Lastpage

752

Abstract

We demonstrate the fabrication of a vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al_0.2Ga_0.8As distributed Bragg-reflector mirrors. The length of the microcavity was 1 λ(λ=1007 nm). Very narrow linewidths of the spontaneous PL-emission was observed as an clear evidence of the cavity effect. The PL-linewidth of reference samples that were grown without a cavity proves to be significantly broader

Keywords

III-V semiconductors; chemical vapour deposition; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum dots; spontaneous emission; AlAs-Al_0.2Ga_0.8As; InGaAs; MOCVD growth; PL-linewidth; distributed Bragg-reflector mirrors; fabrication; optical properties; self assembled Stranski-Krastanow quantum dots; spontaneous emission; vertical microcavity laser; Carrier confinement; Indium gallium arsenide; Laser modes; MOCVD; Microcavities; Optical device fabrication; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492404

Filename

492404