Title :
Strained 1.55 μm GaInAsP/GaInAsP SCH MQW laser grown by CBE
Author :
Torabi, B. ; Nutsch, A. ; Kratzer, H. ; Tränkle, G. ; Weimann, G.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
Abstract :
We report the successful realization of quaternary/quaternary (GaInAsP/GaInAsP) SCH MQW lasers with 1.55 μm emission wavelength grown by chemical beam epitaxy (CBE). Strained and strain symmetrized multiquantum well laser structures with high number of ternary/quaternary (GaInAs/GaInAsP) and quaternary/quaternary quantum wells and barriers and different strain were grown. Metal cladding ridge waveguide (MCRW) lasers were fabricated and characterized. The influence of composition, strain and quantum well number was studied. For 10 QW lasers, a threshold current density per quantum well of 62 A/cm2 was extrapolated for infinitely long cavity. MCRW lasers with 6 QWs, 7 μm ridge width and 250 μm long cavity showed a threshold current of 20 mA for CW operation at 20°C. The results compare well with MQW lasers grown by more widely used MOCVD and are one of the best values achieved by CBE so far
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.55 micron; 20 C; 20 mA; 250 micron; 7 micron; CBE growth; CW operation; GaInAsP-GaInAsP; MCRW lasers; chemical beam epitaxy; metal cladding ridge waveguide lasers; multiquantum well laser structures; quaternary/quaternary quantum wells; strained SCH MQW laser; threshold current density; Capacitive sensors; Chemical lasers; Epitaxial growth; Laser beams; MOCVD; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492410
