Title :
A unique 2 to 6 GHz 1 watt high efficiency GaAs MMIC amplifier design using all-pass matching networks
Author :
Arell, T. ; Hongsmatip, T.
Author_Institution :
Div. of Microelectronics, M/A-COM, Lowell, MA, USA
Abstract :
A broadband MMIC (monolithic microwave integrated circuit) power amplifier design approach using lossy matching networks in the form of a bridged-T all-pass network is described. This approach offers the advantage of exceptional gain flatness, good input voltage standing wave ratio (VSWR), high efficiency, and small size. A two-stage amplifier is described that delivers greater than 1 W across the 2-6-GHz range with a linear gain of 19 dB, an input VSWR better than 1.7:1, a power-added efficiency of 25%, and a chip area less than 4.4 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; power amplifiers; wideband amplifiers; 1 W; 19 dB; 2 to 6 GHz; 25 percent; VSWR; all-pass matching networks; bridged-T network; broadband MMIC power amplifier design; gain flatness; high efficiency amplifier; input voltage standing wave ratio; lossy matching networks; monolithic microwave integrated circuit; semiconductor; two-stage amplifier; Broadband amplifiers; Circuits; Couplers; Cutoff frequency; Gallium arsenide; Impedance matching; MMICs; Operational amplifiers; Power amplifiers; Semiconductor optical amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247191
