Understanding the influence of Ea and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

This work highlights the contribution of E_a and band-offset toward conductance change in RRAM dielectrics. Both Al₂O₃ and HfO₂ RRAM showed a gradual conductance change suitable for synaptic applications, and the lower E_a of the dielectric helps in generating higher number of vacancies during set and higher band-offset of the dielectric limiting the TAT current during reset resulting in a higher conductance change in Al₂O₃ RRAM compared to HfO₂ RRAM.