DocumentCode :
3388493
Title :
Complementary HFET 32-bit serial multiplier
Author :
LaRue, G.S. ; Grider, D.E.
Author_Institution :
Boeing Defense & Space Group, Seattle, WA, USA
fYear :
1997
fDate :
4-7 Oct. 1997
Firstpage :
89
Lastpage :
92
Abstract :
A 32-bit serial integer multiplier was designed to investigate the yield and performance of complementary HFET technology. An average wafer yield of 20% was obtained. A power dissipation of 3 mW (about 1 mu W per equivalent gate) at 5 MHz operation was demonstrated, which is among the lowest reported for any GaAs logic circuit. The maximum operating frequency was 500 MHz with power dissipation of 2.5 W at a supply voltage of 2.36 V. Lower threshold voltages were obtained with implanted n-type transistors on non-delta doped wafers. This resulted in up to a 50% reduction in the static power dissipation at the same operating frequency.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated logic circuits; multiplying circuits; 2.36 V; 2.5 to 3 mW; 5 to 500 MHz; GaAs; complementary HFET; complementary HFET technology; implanted n-type transistors; logic circuit; maximum operating frequency; power dissipation; serial integer multiplier; threshold voltages; wafer yield; yield; Circuit testing; Delay; HEMTs; Inverters; Logic circuits; MODFETs; Power dissipation; Power supplies; Space technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
Type :
conf
DOI :
10.1109/GAAS.1992.247216
Filename :
247216
Link To Document :
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