Title :
Diamond-MESFETs - synthesis and integration
Author :
Schwitiers, M. ; Dixon, M.P. ; Tajani, A. ; Twitchen, D.J. ; Coe, S.E. ; El-Haji, H. ; Kubovic, M. ; Neuburger, M. ; Kaiser, A. ; Kohn, E.
Author_Institution :
CVD Lab., Element Six Ltd., Ascot
Abstract :
We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p-type). The devices presented in this paper are based on delta-doping. Delta-doping stands for the use of very thin (<5 mm) highly doped (NA 1020 cm-3 ) buried layers. This approach poses a huge challenge in terms of synthesis as well as processing. First successful attempts of fully integrating working delta-doped diamond MESFETs are presented
Keywords :
Schottky gate field effect transistors; chemical vapour deposition; diamond; semiconductor doping; CVD; chemical-vapour-deposition; delta-doping; diamond-MESFET; diamond-based electronic devices; metal-semiconductor field-effect-transistors; Chemical vapor deposition; MESFETs; Microwave devices; Phased arrays; Radar applications; Radio frequency; Semiconductor device doping; Semiconductor materials; Solid state circuits; Voltage;
Conference_Titel :
Radar Conference, 2005. EURAD 2005. European
Conference_Location :
Paris
Print_ISBN :
2-9600551-3-6
DOI :
10.1109/EURAD.2005.1605549
